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Ever wondered how the shape and layout of tiny transistors can affect their speed? Well, let's dive into how different designs like nanosheets, nanowires, FinFETs, and TreeFETs perform in the world of radio frequency (RF) signals.

Designers have been trying out some clever tricks to boost the performance of these tiny powerhouses. For instance, using a double-sided gate contact can help, but it has its drawbacks. As the active region of the transistor gets wider, the gate resistance increases, which slows down the maximum oscillation frequency. However, another design called contact over active-gate can reduce this resistance by allowing small-signal gate current to flow vertically through special paths called gate vias.

Now, what if we combine the best of both worlds? A hybrid layout that merges the advantages of double-sided gate contact and contact over active-gate can further cut down gate resistance, leading to a speedier transistor.

But not all designs are created equal. FinFETs and TreeFETs, with their vertical channel sections, block the lateral small-signal gate current path. This actually increases the gate resistance and slows down the transistor's maximum oscillation frequency compared to nanosheets and nanowires.

Here's where nanowires take the lead. When they adopt the hybrid layout and have a short gate length of 18 nanometers, they reach the highest maximum oscillation frequency of 590 GHz. Why? Because they have the lowest gate resistance, the highest electron concentration, and the best gate control.

So, the next time you wonder why your device is so fast, remember, it's all about the tiny transistors and their unique designs!

===== How Different Transistor Designs Affect Their Speed

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